Simulation and Analysis of SRAM Cell Structures at 90nm Technology
نویسندگان
چکیده
SRAM is a most common embedded memory for CMOS ICs and it uses Bistable Latching circuitry to store a bit. This paper represents the simulation of different SRAM cells and their comparative analysis on different parameters such as Power Supply Voltage, Operating Frequency, Temperature and area efficiency etc. All the simulations have been carried out on BSIM 3V3 90nm technology at Tanner EDA tool.
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